Channel | Voltage Dependence of Activation | ||||
---|---|---|---|---|---|
Control | HWTX-IV | ||||
V1/2 | k | V1/2 | k | IC50 | |
mV | mV | mV | mV | nM | |
hNav1.7 | −38.8 ± 0.8 | 6.8 ± 0.7 | −40.2 ± 0.7 | 7.3 ± 0.6 | 22.7 ± 6.3 |
L201V/N206D | −40.4 ± 1.3 | 7.9 ± 1.2 | −36.7 ± 1.2 | 9.6 ± 1.1 | 20.8 ± 3.6 |
F813G | −32.7 ± 1.0 | 6.7 ± 0.9 | −36.3 ± 1.4 | 8.0 ± 1.3 | 28.2 ± 5.7 |
E818C | −41.6 ± 0.8a | 7.1 ± 0.7a | −39.7 ± 0.9a | 8.9 ± 0.8a | 9120.1 ± 1400.0 |
E203K/E818C | −20.5 ± 0.3a | 8.5 ± 0.3a | −16.0 ± 1.1a | 13.8 ± 1.0a | 8892.0 ± 1135.2 |
F204A/F813G | −46.7 ± 0.4 | 4.5 ± 0.3 | −42.7 ± 0.4 | 6.1 ± 0.3 | 26.7 ± 6.4 |
↵a The concentration of HWTX-IV was 10 μM.