TABLE 1

Kinetic parameters for hERG channel gating in control and presented of AMD at 22°C and 37°C

Voltage-dependent rates are expressed as k_(v) = k₀ exp (k₁V), where k_(v) stands for the transitional rate at a designated membrane potential V (in millivolts) at 22°C. Transitions with negligible transitioned rates (i.e., zero) are not indicated here for the sake of simplicity. For the electronic charge displacement during activation, please also refer to the single unit of voltage sensors movement in previous hERG models (Johnson et al., 1999; Bett et al., 2011). The values are based on the root template (22°C), and each transition of the conditions at 37°C is given. The changes in voltage dependence of activation (C₁↔C₂↔C₃↔C₄) by AMD are based on the experiments in Figs. 1 and 3. The increase of silent route for entry to and recovery from inactivation by AMD (I_O2→I_O1, I_O1→I₅) is based on the experiments in Fig. 5. The slowing of transitions into inactivation (C→I and O→I) at higher temperatures, and the increase of voltage dependency of inactivation (C→I and O→I) when in the presence of AMD are based on the experiments in Figs. 1–3 and 5. The major changes made by AMD are shown in bold.