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The following term was not found in PubMed: Muilwijk-Koezen
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Did you mean van muijlwijk koezen je[au] (20 results)?
Controlling the Morphology of Tellurene for a High-Performance H2S Chemiresistive Room-Temperature Gas Sensor.
Je Y, Chee SS. Je Y, et al. Nanomaterials (Basel). 2023 Oct 5;13(19):2707. doi: 10.3390/nano13192707. Nanomaterials (Basel). 2023. PMID: 37836349 Free PMC article.
A two-dimensional (2D) van der Waals material composed only of tellurium (Te) atoms-tellurene-is drawing attention because of its high intrinsic electrical conductivity and strong interaction with gas molecules, which could allow the development of high-performance chemire …
A two-dimensional (2D) van der Waals material composed only of tellurium (Te) atoms-tellurene-is drawing attention because of its hig …
Surface Passivation of Layered MoSe(2) via van der Waals Stacking of Amorphous Hydrocarbon.
Lee DH, Dongquoc V, Hong S, Kim SI, Kim E, Cho SY, Oh CH, Je Y, Kwon MJ, Hoang Vo A, Seo DB, Lee JH, Kim S, Kim ET, Park JH. Lee DH, et al. Among authors: je y. Small. 2022 Oct;18(40):e2202912. doi: 10.1002/smll.202202912. Epub 2022 Sep 4. Small. 2022. PMID: 36058645
However, conventional dielectric deposition involves the formation of additional interfacial defects associated with broken covalent bonds, resulting in accidental electrostatic doping or enhanced hysteretic behavior. In this study, centimeter-scaled van der Waals passivat …
However, conventional dielectric deposition involves the formation of additional interfacial defects associated with broken covalent bonds, …
Parasitic analysis and pi-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations.
Wang Y, Goh WL, Chai KT, Mu X, Hong Y, Kropelnicki P, Je M. Wang Y, et al. Among authors: je m. Rev Sci Instrum. 2016 Apr;87(4):045004. doi: 10.1063/1.4945801. Rev Sci Instrum. 2016. PMID: 27131699
The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid pi-type Butterwo …
The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-ci …