Fig. 5. TP receptor R295 is involved in the voltage sensing process. (A) Left: Snakeplot created with GPCRdb.org of TP receptor indicating positions of mutated amino acids either in blue or in green. Right: Crystal structure of TP receptor cocrystallized with ramatroban (Protein Data Bank: 6IIU). The black numbers indicate minimum heavy atom distances (in angstrom) between the carboxyl group of ramatroban and R7.40. (B) Summary of mutants tested in terms of voltage dependence. “+” indicates an increase of at least 50% in ΔF535/ΔF480 between −90 and +60 mV in presence of a nonsaturating agonist concentration. (C–E) HEK293T cells transiently transfected with Gα13-p115 RhoGEF interaction assay and as indicated with either TP receptor wt or TP receptor R295K or R295A. (C) Left: Means ± S.D. cells were depolarized from −90 to +60 mV in the presence of U46619 (TP receptor wt [blue]: n = 6, TP receptor R295K [green] n = 5). Right: Cells were selected for a similar response to U46619 at −90 mV (included: ΔF535/F480 in presence of U46619 at −90 mV: 0.02 ≤ ΔF535/ΔF480 ≤ 0.08). The responses of the selected groups to +60 mV were then compared showing a significantly stronger activation upon depolarization for TP receptor R295K compared with wt (TP receptor wt = 3.13 ± 0.30, n = 7; TP receptor R295K = 5.31 ± 1.85, n = 6; Mann Whitney test **P = 0.0012). (D) Means ± S.D. TP receptor R295A induced Gα13-p115-interaction (n = 6). (E) Summarized data (n = 3–14 cells per data point) of the voltage-induced alterations in the emission ratio after subtraction of the −90 mV response for TP receptor wt, TP receptor R295K, and R295A recorded in the TP receptor induced Gα13-p115-interaction in presence of U46619. For −45 mV values TP receptor R295K and TP receptor R295A showed significant difference against wt (means ± S.D., wt n = 7, ΔF535/F480: 0.07 ± 0.01; R295K n = 5, ΔF535/F480: 0.02 ± 0.01; R295A n = 5, ΔF535/F480: 0.04 ± 0.03; Mann Whitney test R295K vs. wt: *P = 0.03, R295A vs. wt **P = 0.003); 60 mV (means ± S.D., wt n = 6, ΔF535/F480: 0.09 ± 0.03; R295K n = 7, ΔF535/F480: 0.17 ± 0.04; R295A n = 7, ΔF535/F480: 0.16 ± 0.06; Mann Whitney test R295K vs. wt: *P = 0.04, R295A vs. wt **P = 0.001); 100 mV (means ± S.D., wt n = 5, ΔF535/F480: 0.11 ± 0.04; R295K n = 6, ΔF535/F480: 0.21 ± 0.05; Mann Whitney test R295K vs. wt: **P = 0.009).